On April 30, 2026, the State Administration for Market Regulation and the National Standardization Administration approved the release of GB/T 45716.1-2026 "Bias Temperature Instability Test for Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in Semiconductor Devices Part 1: Fast Bias Temperature Instability Test for MOSFETs", which was led by our key laboratory and will be implemented from November 1, 2026.
Bias temperature instability (BTI) is one of the key failure mechanisms affecting the long-term reliability of semiconductor devices and circuits, and its degradation is generally characterized by threshold voltage drift (Δ Vth). Due to the presence of a large number of fast recoverable defects in MOSFETs (especially advanced process MOSFETs), Δ Vth undergoes rapid "recovery" within a few microseconds or even shorter after stress relief, resulting in a lower Δ Vth measured by traditional DC slow measurement methods than the true BTI degradation, which affects the accurate evaluation of BTI reliability. This standard is dedicated to solving this technical difficulty and specifies the method for rapid bias temperature instability testing. The core breakthrough lies in:
(1) Measurement speed leap: By adopting advanced single point drain current measurement technology, the measurement time of Δ Vth has been significantly reduced from the traditional "seconds to tens of seconds" level to milliseconds or even microseconds.
(2) Accuracy improvement: Maximize the suppression of measurement bias caused by BTI recovery effects, making the evaluation results more realistic in reflecting the BTI reliability level of MOSFETs under actual operating conditions.
The publication of this standard is an important supplement to my previously published national standard GB/T 45716-2025 "Bias Temperature Instability Test for Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in Semiconductor Devices". Not only does it provide new and efficient standard testing methods for semiconductor manufacturing, packaging testing, and inspection laboratories, but it also has important guiding significance for China's semiconductor industry to improve process reliability and accelerate product development iteration.